Low Temperature Plasma CVD Grown Graphene by Microwave Surface-Wave Plasma CVD Using Camphor Precursor

نویسندگان

  • Hideo Uchida
  • Hare Ram Aryal
  • Sudip Adhikari
  • Masayoshi Umeno
چکیده

Hydrocarbon precursor such as methane has been widely used to grow graphene films and the methods of growing quality graphene films are dominated by thermal CVD (chemical vapor deposition) system. Graphene films grown by plasma process are generally highly defective which in turns degrade the quality of the films. Here, using a green precursor, camphor we demonstrate a simple and economical method to get high-quality graphene film on copper substrate by micro wave surface-wave plasma CVD at relatively low temperature 550°C. Graphene film grown using camphor shows superior quality than that of the film grown using methane. Results revealed that camphor precursor is a good alternative to hydrocarbon precursors for graphene research.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Cold Wall CVD (CWCVD) in the Synthesis of Few Layered Graphene on Ni

We report the growth of graphene at a low temperature using the cold wall chemical vapor deposition technique (CWCVD). Few layered (~6-8 layers) graphene were grown on nickel-coated silicon with acetylene as the precursor gas. The advantage of the combination of the acetylene (as a carbon feedstock) and the nickel catalyst was the lowering of the graphene growth temperature. Nickel coated silic...

متن کامل

The Growth of Multilayer Graphene over MCM-41 by CVD Method in Atmospheric Pressure: metal–Free Nanocatalyst

Graphene films were fabricated over synthesized MCM-41 nanocatalyst by chemical vapordeposition method, and the reaction was carried in atmospheric pressure at 750˚C. Acetylenegas used as a carbon precursor and the synthesis reaction took place in hydrogen atmosphere.Mesoporous MCM-41 was synthesized at room temperature, using wet chemical method. Thesynthesized metal free catalyst was characte...

متن کامل

Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition

Plasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD...

متن کامل

Effect of post-annealing on the plasma etching of graphene-coated-copper.

High temperature deposition of graphene on Cu by chemical vapor deposition can be used to produce high quality films. However, these films tend to have a non-equilibrium structure, with relatively low graphene adhesion. In this study, samples of graphene grown on copper foils by high temperature CVD were post-deposition annealed at temperatures well below the critical temperature of Cu. Resista...

متن کامل

Growth of contiguous graphite fins from thermally conductive graphite fibers

Contiguous graphite fins can be grown with Microwave Plasma CVD from the surface of different types of thermally conductive (TC), graphite fibers. The fins grow from all fiber filaments in multiple same TC graphite fiber tow bundles. Fin morphology consists of contiguous branching graphene basal planes originating from the fiber’s surface and curling outwards regardless of the fiber’s isotropic...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2016